SPN2622 mosfet equivalent, dual n-channel enhancement mode mosfet.
20V/4.0A,RDS(ON)= 80mΩ@VGS=4.5V 20V/3.4A,RDS(ON)= 100mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum D.
such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.
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